Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing
Zanelli G., Ditalia Tchernij S., Genovese M., Picollo F., Traina P., Campostrini M., Rigato V., Redolfi E., Sturari S., Amine N., Varzi V., Nieto Hernández E., Corte E., Andrini G., Fontan I., Forneris J.Single-photon sources, Ion implantation, Silicon carbide, Silicon vacancy, Photoluminescence, Formation yield, Laser annealing, Color centers
| Document type | Article |
| Journal title / Source | Scientific Reports |
| Volume | 15 |
| Issue | 1 |
| Publisher's name | Springer Science and Business Media LLC |
| Publisher's address (city only) | Dordrecht, GX, Netherlands |
| Publication date | 2025-1-1 |
| ISSN | 2045-2322 |
| DOI | 10.1038/s41598-025-23259-6 |