Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Wehmann H-H, Lugauer H-J, Straßburg M., Trampert A., Varghese T., Avramescu A., Schimpke T., Fündling S., Nicolai L., Ledig J., Zhou H., Steib F., Hartmann J., Waag A

Crystal morphology, Metalorganic vapor phase epitaxy, Gallium compounds, Nitrides, Light emitting diodes

Document type Article
Journal title / Source Journal of Crystal Growth
Volume 476
Page numbers / Article number 90-98
Publisher's name Elsevier BV
Publication date 2017-10
ISSN 0022-0248
DOI 10.1016/j.jcrysgro.2017.08.021
Language English

Back to the list view