Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry
Petrik P., Bársony I., Fried M., Agócs E., Kótai E., Szilágyi E., Romanenko A., Khanh N., Kalas B., LOHNER T., Nemeth A., Tóth Z., Zolnai Z., Budai J., Gyulai J.Ion implantation, spectroscopic ellipsometry, in situ measurement
| Document type | Article |
| Journal title / Source | Materials Science in Semiconductor Processing |
| Volume | 152 |
| Page numbers / Article number | 107062 |
| Publisher's name | Elsevier |
| Publisher's address (city only) | Amsterdam |
| Publication date | 2022-8-16 |
| DOI | 10.48550/arXiv.2305.07635 |
| Language | English |