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Silicon Carbide Stacking‐Order‐Induced Doping Variation in Epitaxial Graphene

Momeni Pakdehi, D., Schädlich, P., Nguyen, T.T.N., Zakharov, A.A., Wundrack, S., Najafidehaghani, E., Speck, F., Pierz, K., Seyller, T., Tegenkamp, C. (Institut für Festkörperphysik, Leibniz Universität Hannover, Hannover, Germany) and Pierz, K.
Keywords:

epitaxial graphenes, hexagonal silicon carbides, SiC spontaneous polarization, surface-dependent polarization doping

Document typeArticle
Journal title / SourceAdvanced Functional Materials
Volume30
Issue45
Page numbers / Article number2004695
Publisher's nameWiley
Publication date 2020-09-11
ISSN1616-301X, 1616-3028
DOI10.1002/adfm.202004695
Web URLhttps://onlinelibrary.wiley.com/doi/10.1002/adfm.202004695
LanguageEnglish

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