Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Miranda E., Salvador E., Campabadal F., Suñé J., Aguirre F., González M.Resistive switching, memristive devices, modeling
| Document type | Article |
| Journal title / Source | Solid-State Electronics |
| Volume | 210 |
| Page numbers / Article number | 108812 |
| Publisher's name | Elsevier BV |
| Publisher's address (city only) | Amsterdam, NX, Netherlands |
| Publication date | 2023-1-1 |
| ISSN | 0038-1101 |
| DOI | 10.1016/j.sse.2023.108812 |
| Language | English |