Surface Passivation Properties of ${\textrm{HfO}}_{2}$ Thin Film on n-Type Crystalline Si

Marstein Erik Stensrud, Perros Alexander Pyymaki, Halvard Haug, Repo Paivikki, Cheng Xuemei, Di Sabatino Marisa, Savin Hele

Passivation, Hafnium compounds, Silicon, Annealing, Temperature, silicon, atomic layer deposition, carrier lifetime, crystal growth from melt, dielectric thin films, electrical resistivity, hafnium compounds, passivation, refractive index, Si, surface passivation, hafnium oxide thin film, atomic layer deposition, resistivity, low temperature anneal, precleaning, precursors, deposition temperature, postannealing temperature, minority carrier lifetime, surface recombination velocity, Czochralski n-type wafers, light soaking, refractive index, solar cells, HfO2, silicon surface passivation, Atomic layer deposition (ALD), defect density, fixed charges, hafnium oxide (HfO2), photovoltaic cells

Document type Article
Journal title / Source IEEE Journal of Photovoltaics
Volume 7
Issue 2
Page numbers / Article number 479-485
Publisher's name Institute of Electrical and Electronics Engineers (IEEE)
Publisher's address (city only) 445 Hoes Lane, Piscataway, NJ 08855-1331, USA
Publication date 2017-3
ISSN 2156-3381, 2156-3403
DOI 10.1109/JPHOTOV.2016.2645399
Language English

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