A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Maldonado D., González M., Aguirre F., Castán H., Dueñas S., Miranda E., Campabadal F., Jiménez-Molinos F., García H., Cantudo A., Aldana S., Vinuesa G., Roldán J.Resistive switching, memristive devices, resistive memories
| Document type | Article |
| Journal title / Source | Materials Science in Semiconductor Processing |
| Volume | 169 |
| Page numbers / Article number | 107878 |
| Publisher's name | Elsevier BV |
| Publisher's address (city only) | Amsterdam, NX, Netherlands |
| Publication date | 2024-1-1 |
| ISSN | 1369-8001 |
| DOI | 10.1016/j.mssp.2023.107878 |
| Language | English |