High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Koybasi O., Nordseth Ø., Tran T., Povoli M., Rajteri M., Pepe C., Bardalen E., Manoocheri F., Summanwar A., Korpusenko M., Getz M.N., Ohlckers P., Ikonen E., Gran J.

silicon photodetector; inversion layer photodiode; induced-junction; surface passivation;PECVD silicon nitride; radiometry; optical power; primary standard; predictable quantum efficiency

Document type Article
Journal title / Source Sensors
Volume 21
Issue 23
Page numbers / Article number 7807
Publisher's name MDPI AG
Publication date 2021-11-24
ISSN 1424-8220
DOI 10.3390/s21237807
Language English

Back to the list view