High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx
Koybasi, O., Nordseth, Ø., Tran, T., Povoli, M., Rajteri, M., Pepe, C., Bardalen, E. (HBV), Manoocheri, F., Summanwar, A., Korpusenko, M., Getz, M.N., Ohlckers, P., Ikonen, E. and Gran, J.silicon photodetector; inversion layer photodiode; induced-junction; surface passivation;PECVD silicon nitride; radiometry; optical power; primary standard; predictable quantum efficiency
| Document type | Article |
| Journal title / Source | Sensors |
| Volume | 21 |
| Issue | 23 |
| Page numbers / Article number | 7807 |
| Publisher's name | MDPI AG |
| Publication date | 2021-11-24 |
| ISSN | 1424-8220 |
| DOI | 10.3390/s21237807 |
| Language | English |