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Quantum Dipole Effects in a Silicon Transistor under High Electric Fields

Saito, S., Li, Z. (PTB), Yoshimoto, H,, Tomita, I., Tsuchiya, Y., Sasago, Y., Arimoto, H., Liu, F., Husain, M.K., Hisamoto, D., Rutt, H.N. and Kurihara, S.
Keywords:

Si, CMOS, transistor, quantum dipole, Heisenberg model

Document typeArticle
Journal title / SourceJournal of the Physical Society of Japan
Volume87
Issue9
Page numbers / Article number094801
Publisher's namePhysical Society of Japan
Publication date 2018-09-15
ISSN0031-9015, 1347-4073
DOI10.7566/jpsJ.87.094801
LanguageEnglish

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