Quantum Dipole Effects in a Silicon Transistor under High Electric Fields

Saito S., Li Z., Yoshimoto H,, Tomita I., Tsuchiya Y., Sasago Y., Arimoto H., Liu F., Husain M.K., Hisamoto D., Rutt H.N., Kurihara S.

Si, CMOS, transistor, quantum dipole, Heisenberg model

Document type Article
Journal title / Source Journal of the Physical Society of Japan
Volume 87
Issue 9
Page numbers / Article number 094801
Publisher's name Physical Society of Japan
Publication date 2018-9-15
ISSN 0031-9015, 1347-4073
DOI 10.7566/jpsJ.87.094801
Language English

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