SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells

Gonzalez M.B., Aguirre F., Miranda E., campabadal F., Saludes M., Suñé J.

antifuse cell, oxide breakdown, memory, one-time programmable, quantum conductance unit

Document type Article
Journal title / Source IEEE Electron Device Letters
Publisher's name Institute of Electrical and Electronics Engineers (IEEE)
Publisher's address (city only) Piscataway, NJ, United States
Publication date 2023-4-19
DOI 10.36227/techrxiv.22640299.v1
Language English

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