SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells
Gonzalez M.B., Aguirre F., Miranda E., campabadal F., Saludes M., Suñé J.antifuse cell, oxide breakdown, memory, one-time programmable, quantum conductance unit
| Document type | Article |
| Journal title / Source | IEEE Electron Device Letters |
| Publisher's name | Institute of Electrical and Electronics Engineers (IEEE) |
| Publisher's address (city only) | Piscataway, NJ, United States |
| Publication date | 2023-4-19 |
| DOI | 10.36227/techrxiv.22640299.v1 |
| Language | English |