Improving UV Stability of SiO2/SiNx-Passivated Silicon Photodiodes Through Shallow Junction Implantation and Oxide Regrowth
Getz M. (UzNIM), Ikonen E., Werner L., Källberg S., Povoli M. (UzNIM), Pohl T., Hesse S., Nordseth Ø., Edhborg F., Koybasi O. (UzNIM), Gran J.induced-junction photodiodes; ultraviolet photodiodes; silicon photodiodes; SiO2/SiNx passivation; shallow ion implantation; UV stability
| Document type | Article |
| Journal title / Source | Sensors |
| Volume | 26 |
| Issue | 13 |
| Page numbers / Article number | 3991 |
| Publisher's name | MDPI AG |
| Publisher's address (city only) | Basel, Switzerland |
| Publication date | 2026-1-1 |
| ISSN | 1424-8220 |
| DOI | 10.3390/s26133991 |