Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Kruskopf M., Pierz K., Wundrack S., Stosch R., Dziomba T., Kalmbach C.C., Müller A., Ahlers F.J., Schumacher H.W., Baringhaus J., Tegenkamp C.Epitaxial graphene, step bunching, graphene buffer layer, graphene bilayer, resistance anisotropy, quantum Hall resistance, hydrogen, argon, pretreatment, transport properties, SiC substrate, annealing, shallowly stepped
| Document type | Article |
| Journal title / Source | Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment |
| Peer-reviewed article | 1 |
| Volume | 27 |
| Issue | 18 |
| Page numbers / Article number | 185303 |
| Publisher's name | IOP Publishing Ltd |
| Publication date | 2015-4-20 |
| ISSN | 0953-8984 |
| DOI | 10.1088/0953-8984/27/18/185303 |
| Web URL | http://iopscience.iop.org/article/10.1088/0953-8984/27/18/185303/meta |
| Language | English |