Dissipative quantum Hall effect in polycrystalline CVD graphene
Lafont F., Ribeiro-Palau R., Cresti A., Han Z., Cummings A.W., Roche S., Bouchiat V., Ducourtieux S., Schopfer F., Poirier W.Backscatter,C,CVD graphene,Conductivity,Grain boundaries,Graphene,Hall bar,Hall effect,Landau level filling factor,Quantization (signal),Quantum Hall effect,Resistance,SiO2-Si,backscatter,carriers backscattering,chemical vapor deposition,chemical vapour deposition,counter propagating edge state,dissipative quantum Hall effect,electric resistance measurement,electrical conductivity measurement,grain boundaries,graphene,line defect,longitudinal conductivity measurement,numerical simulation,polycrystalline CVD graphene,quantum Hall effect,resistance metrology,resistance standards,short-circuit current,short-circuit currents,structural characterizations,wrinkles
| Document type | Proceedings |
| Journal title / Source | 29th Conference on Precision Electromagnetic Measurements (CPEM 2014) |
| Page numbers / Article number | 42-43 |
| Publisher's name | IEEE |
| Publication date | 2014 |
| ISSN | 0589-1485 |
| DOI | 10.1109/CPEM.2014.6898249 |
| ISBN | 978-1-4799-2479-0 |
| Web URL | http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6898249 |
| Language | English |