Diffusion-induced grain boundary migration as mechanism for grain growth and defect annihilation in chalcopyrite thin films
Stange H., Brunken S., Greiner D., Heinemann M. D., Kaufmann C. A., Schmidt S. S., Bäcker J.-P., Klaus M., Genzel C., Mainz R.X-ray diffraction, Physical vapor deposition (PVD), Stacking faults, Grain boundary migration, CuInSe2
Document type | Article |
Journal title / Source | Acta Materialia |
Peer-reviewed article | 1 |
Volume | 111 |
Issue | - |
Page numbers / Article number | 377-384 |
Publisher's name | Elsevier Ltd. |
Publisher's address (city only) | Amsterdam |
Publication date | 2016-4-10 |
ISSN | 1359-6454 |
DOI | 10.1016/j.actamat.2016.03.073 |
Language | English |