Diffusion-induced grain boundary migration as mechanism for grain growth and defect annihilation in chalcopyrite thin films

Stange H., Brunken S., Greiner D., Heinemann M. D., Kaufmann C. A., Schmidt S. S., Bäcker J.-P., Klaus M., Genzel C., Mainz R.

X-ray diffraction, Physical vapor deposition (PVD), Stacking faults, Grain boundary migration, CuInSe2

Document type Article
Journal title / Source Acta Materialia
Peer-reviewed article 1
Volume 111
Issue -
Page numbers / Article number 377-384
Publisher's name Elsevier Ltd.
Publisher's address (city only) Amsterdam
Publication date 2016-4-10
ISSN 1359-6454
DOI 10.1016/j.actamat.2016.03.073
Language English

Back to the list view