Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
Chen S., Valov I.capping layers, electrode materials, redox reactions, resistive switching, thicknesses
| Document type | Article |
| Journal title / Source | Advanced Materials |
| Page numbers / Article number | 2105022 |
| Publisher's name | Wiley |
| Publication date | 2021-11-21 |
| ISSN | 0935-9648, 1521-4095 |
| DOI | 10.1002/adma.202105022 |
| Web URL | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202105022 |
| Language | English |