Breakdown of the quantum Hall effect in epitaxial graphene
Janssen T.J.B.M., Rozhko S., Tzalenchuk A., Alexander-Webber J.A., Nicholas R.J.Current measurement,Electric breakdown,Electrical resistance measurement,Graphene,Hall effect,Hall effect devices,Resistance,SiC-C,Silicon carbide,carrier density,current density,electric breakdown,graphene,magnetic field,magnetic fields,measurement standards,phase space,polymer gated epitaxial graphene,polymers,quantum Hall effect,quantum Hall effect breakdown,quantum resistance standard,silicon compounds,wide band gap semiconductors
| Document type | Proceedings |
| Journal title / Source | Breakdown of the quantum Hall effect in epitaxial graphene |
| Page numbers / Article number | 40-41 |
| Publisher's name | IEEE |
| Publication date | 2014 |
| Conference name | CPEM2014 |
| Conference date | 24-29 Aug. 2014 |
| Conference place | Rio de Janeiro |
| ISSN | 0589-1485 |
| DOI | 10.1109/CPEM.2014.6898248 |
| ISBN | 978-1-4799-2479-0 |
| Web URL | http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6898248 |
| Language | English |