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Quantum realisation of the SI ampere

Short Name: e-SI-Amp, Project Number: 15SIB08
Discharge of electricity lightning
Coordinator
Masaya Kataoka (NPL)

 Using single-electron sources to realise the new ampere  


Single-electron sources that generate currents by transferring an exact number of electrons per cycle would be the most direct methods for the realisation of the new ampere. Therefore, they could provide a practical method for the realisation of the future SI ampere. This project developed the semiconductor device and instrumentation technologies required to implement direct and practical methods for the realisation of the new ampere based on the fixed value of the elementary charge (the magnitude of the electric charge carried by a single electron) which were introduced as part of the envisaged redefinition of the SI units.

 

This builds on from EMRP project SIB07 Qu-Ampere.

Links
Project website
Link
Final Report
Publishable Summary
Publications
Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
2019

Physical Review Research

Exploring a new ammeter traceability route for ionisation chamber measurements
2019

Review of Scientific Instruments

Electrometer Calibration With Sub-Part-Per-Million Uncertainty
2019

IEEE Transactions on Instrumentation and Measurement

Single-Electron Pumps and Quantum Current Metrology in the Revised SI
2019

Annalen der Physik

Noise-optimized ultrastable low-noise current amplifier
2019

Review of Scientific Instruments

Evidence for universality of tunable-barrier electron pumps
2019

Metrologia

Interlaboratory Nanoamp Current Comparison With Subpart-Per-Million Uncertainty
2019

IEEE Transactions on Instrumentation and Measurement

Quantum dot state initialization by control of tunneling rates
2019

Physical Review B

Reference Ultralow DC Current Source Between 1 fA and 100 pA at TÜBİTAK UME
2019

IEEE Transactions on Instrumentation and Measurement

The ampere and the electrical units in the quantum era
2019

Comptes Rendus Physique

Single electron manipulation in silicon nanowires for quantum technologies
2018

Robust formation of quantum dots in GaAs/AlGaAs heterostructures for single-electron metrology
2018

Metrologia

Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate
2018

Nanotechnology

LO-Phonon Emission Rate of Hot Electrons from an On-Demand Single-Electron Source in a GaAs/AlGaAs Heterostructure
2018

Physical Review Letters

Progress towards GaAs multiplexed single-electron pump arrays
2018

Une nouvelle génération d'étalons quantiques fondée sur l'effet Hall quantique
2018

Re-evaluation of uncertainty for calibration of 100 MΩ and 1 GΩ resistors at NPL
2018

Metrologia

Calibrating Ultrastable Low-Noise Current Amplifiers of the Second Generation With a Cryogenic Current Comparator
2018

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

Gigahertz Single-Electron Pumping Mediated by Parasitic States
2018

Nano Letters

Random telegraph noise from resonant tunnelling at low temperatures
2018

Scientific Reports

Quantum Dipole Effects in a Silicon Transistor under High Electric Fields
2018

Journal of the Physical Society of Japan

Measurement of sub-picoampere direct currents with uncertainties below ten attoamperes
2017

Review of Scientific Instruments

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping
2017

Physical Review Applied

Upper frequency limit depending on potential shape in a QD-based single electron pump
2017

Journal of Applied Physics

Random-telegraph-noise by resonant tunnelling at low temperatures
2017

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Transport properties in silicon nanowire transistors with atomically flat interfaces
2017

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Design and Operation of CMOS-Compatible Electron Pumps Fabricated With Optical Lithography
2017

IEEE Electron Device Letters

High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump
2017

Scientific Reports

Robust operation of a GaAs tunable barrier electron pump
2017

Metrologia

Single Carrier Trapping and De-trapping in Scaled Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
2017

Semiconductor Science and Technology

Practical Quantum Realization of the Ampere from the Elementary Charge
2016

Physical Review X

Ultrastable Low-Noise Current Amplifiers With Extended Range and Improved Accuracy
2016

IEEE Transactions on Instrumentation and Measurement

Robustness of single-electron pumps at sub-ppm current accuracy level
2016

Metrologia

Participating EURAMET NMIs and DIs
LNE (France)
MIKES (Finland)
NPL (United Kingdom)
PTB (Germany)
UME (Turkey)
Other Participants
Aalto-korkeakoulusäätiö sr (Finland)
Commissariat à l'énergie atomique et aux énergies alternatives (France)
Korea Research Institute of Standards and Science (Korea, Republic of)
The Chancellor, Masters and Scholars of the University of Cambridge (United Kingdom)
University of Southampton (United Kingdom)