Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
Wehmann H-H, Lugauer H-J, Straßburg M., Trampert A., Varghese T., Avramescu A., Schimpke T., Fündling S., Nicolai L., Ledig J., Zhou H., Steib F., Hartmann J., Waag ACrystal morphology, Metalorganic vapor phase epitaxy, Gallium compounds, Nitrides, Light emitting diodes
| Document type | Article |
| Journal title / Source | Journal of Crystal Growth |
| Volume | 476 |
| Page numbers / Article number | 90-98 |
| Publisher's name | Elsevier BV |
| Publication date | 2017-10 |
| ISSN | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2017.08.021 |
| Web URL | http://www.sciencedirect.com/science/article/pii/S0022024817305146 |
| Language | English |