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Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

Milano, G., Boarino, L. (Istituto Nazionale di Ricerca Metrologica (INRiM)), Valov, I. and Ricciardi, C.

nanowires, ZnO, chemical vapor deposition (CVD), resistive switching,memristive devices, neuromorphic devices

Document typeArticle
Journal title / SourceSemiconductor Science and Technology
Page numbers / Article number034002
Publisher's nameIOP Publishing
Publication date 2022-01-28
ISSN0268-1242, 1361-6641
Web URLhttps://iopscience.iop.org/article/10.1088/1361-6641/ac4b8a

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