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Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

Milano, G., Boarino, L. (Istituto Nazionale di Ricerca Metrologica (INRiM)), Valov, I. and Ricciardi, C.
Keywords:

nanowires, ZnO, chemical vapor deposition (CVD), resistive switching,memristive devices, neuromorphic devices

Document typeArticle
Journal title / SourceSemiconductor Science and Technology
Volume37
Issue3
Page numbers / Article number034002
Publisher's nameIOP Publishing
Publication date 2022-01-28
ISSN0268-1242, 1361-6641
DOI10.1088/1361-6641/ac4b8a
Web URLhttps://iopscience.iop.org/article/10.1088/1361-6641/ac4b8a
LanguageEnglish

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