Surface Passivation Properties of ${\textrm{HfO}}_{2}$ Thin Film on n-Type Crystalline Si
Marstein Erik Stensrud, Perros Alexander Pyymaki, Halvard Haug, Repo Paivikki, Cheng Xuemei, Di Sabatino Marisa, Savin HelePassivation, Hafnium compounds, Silicon, Annealing, Temperature, silicon, atomic layer deposition, carrier lifetime, crystal growth from melt, dielectric thin films, electrical resistivity, hafnium compounds, passivation, refractive index, Si, surface passivation, hafnium oxide thin film, atomic layer deposition, resistivity, low temperature anneal, precleaning, precursors, deposition temperature, postannealing temperature, minority carrier lifetime, surface recombination velocity, Czochralski n-type wafers, light soaking, refractive index, solar cells, HfO2, silicon surface passivation, Atomic layer deposition (ALD), defect density, fixed charges, hafnium oxide (HfO2), photovoltaic cells
| Document type | Article |
| Journal title / Source | IEEE Journal of Photovoltaics |
| Volume | 7 |
| Issue | 2 |
| Page numbers / Article number | 479-485 |
| Publisher's name | Institute of Electrical and Electronics Engineers (IEEE) |
| Publisher's address (city only) | 445 Hoes Lane, Piscataway, NJ 08855-1331, USA |
| Publication date | 2017-3 |
| ISSN | 2156-3381, 2156-3403 |
| DOI | 10.1109/JPHOTOV.2016.2645399 |
| Language | English |