Welcome to the EURAMET Repository Link

The EURAMET Repository Link is an online service providing links to scientific papers published within the European Metrology Research Programme (EMRP), the European Metrology Programme for Innovation and Research (EMPIR) and projects funded by iMERA-Plus.

Surface Passivation Properties of ${\textrm{HfO}}_{2}$ Thin Film on n-Type Crystalline Si

Marstein, Erik Stensrud, Perros, Alexander Pyymaki, Halvard, Haug, Repo, Paivikki, Cheng, Xuemei, Di Sabatino, Marisa and Savin, Hele
Keywords:

Passivation, Hafnium compounds, Silicon, Annealing, Temperature, silicon, atomic layer deposition, carrier lifetime, crystal growth from melt, dielectric thin films, electrical resistivity, hafnium compounds, passivation, refractive index, Si, surface passivation, hafnium oxide thin film, atomic layer deposition, resistivity, low temperature anneal, precleaning, precursors, deposition temperature, postannealing temperature, minority carrier lifetime, surface recombination velocity, Czochralski n-type wafers, light soaking, refractive index, solar cells, HfO2, silicon surface passivation, Atomic layer deposition (ALD), defect density, fixed charges, hafnium oxide (HfO2), photovoltaic cells

Document typeArticle
Journal title / SourceIEEE Journal of Photovoltaics
Volume7
Issue2
Page numbers / Article number479-485
Publisher's nameInstitute of Electrical and Electronics Engineers (IEEE)
Publisher's address (city only)445 Hoes Lane, Piscataway, NJ 08855-1331, USA
Publication date 2017-03
ISSN2156-3381, 2156-3403
DOI10.1109/JPHOTOV.2016.2645399
LanguageEnglish

Back to the list view