Transport properties in silicon nanowire transistors with atomically flat interfaces

Liu F., Husain M.K., Li Z., Sotto M.S.H., Burt D., Fletcher J.D., Kataoka M., Tsuchiya Y., Saito S.
Keywords:

narrow channel effect, silicon nanowire, SOI, TMAH, self-limiting oxidation

Document type Proceedings
Journal title / Source 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Publisher's name IEEE
Publication date 2017-2-28
Conference name 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Conference date 28-02-2017 to 02-03-2017
Conference place Toyama
DOI 10.1109/EDTM.2017.7947561
Web URL https://eprints.soton.ac.uk/402316/
Language English

Back to the list view