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Transport properties in silicon nanowire transistors with atomically flat interfaces

Liu, F., Husain, M.K., Li, Z. (PTB), Sotto, M.S.H., Burt, D., Fletcher, J.D., Kataoka, M., Tsuchiya, Y. and Saito, S.
Keywords:

narrow channel effect, silicon nanowire, SOI, TMAH, self-limiting oxidation

Document typeProceeding
Journal title / Source2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Publisher's nameIEEE
Publication date 2017-02-28
Conference name2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Conference date28-02-2017 to 02-03-2017
Conference placeToyama
DOI10.1109/EDTM.2017.7947561
Web URLhttps://eprints.soton.ac.uk/402316/
LanguageEnglish

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