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High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Koybasi, O., Nordseth, Ø., Tran, T., Povoli, M., Rajteri, M., Pepe, C., Bardalen, E. (HBV), Manoocheri, F., Summanwar, A., Korpusenko, M., Getz, M.N., Ohlckers, P., Ikonen, E. and Gran, J.

silicon photodetector; inversion layer photodiode; induced-junction; surface passivation;PECVD silicon nitride; radiometry; optical power; primary standard; predictable quantum efficiency

Document typeArticle
Journal title / SourceSensors
Page numbers / Article number7807
Publisher's nameMDPI AG
Publication date 2021-11-24

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