High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx
Koybasi O., Nordseth Ø., Tran T., Povoli M., Rajteri M., Pepe C., Bardalen E., Manoocheri F., Summanwar A., Korpusenko M., Getz M.N., Ohlckers P., Ikonen E., Gran J.silicon photodetector; inversion layer photodiode; induced-junction; surface passivation;PECVD silicon nitride; radiometry; optical power; primary standard; predictable quantum efficiency
Document type | Article |
Journal title / Source | Sensors |
Volume | 21 |
Issue | 23 |
Page numbers / Article number | 7807 |
Publisher's name | MDPI AG |
Publication date | 2021-11-24 |
ISSN | 1424-8220 |
DOI | 10.3390/s21237807 |
Language | English |