High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Koybasi O., Nordseth Ø., Tran T., Povoli M., Rajteri M., Pepe C., Bardalen E., Manoocheri F., Summanwar A., Korpusenko M., Getz M.N., Ohlckers P., Ikonen E., Gran J.
Keywords:

silicon photodetector; inversion layer photodiode; induced-junction; surface passivation;PECVD silicon nitride; radiometry; optical power; primary standard; predictable quantum efficiency

Document type Article
Journal title / Source Sensors
Volume 21
Issue 23
Page numbers / Article number 7807
Publisher's name MDPI AG
Publication date 2021-11-24
ISSN 1424-8220
DOI 10.3390/s21237807
Language English

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