High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx
Koybasi O., Nordseth Ø., Tran T., Povoli M., Rajteri M., Pepe C., Bardalen E., Manoocheri F., Summanwar A., Korpusenko M., Getz M.N., Ohlckers P., Ikonen E., Gran J.Silicon Photodetector; Inversion Layer Photodiode; Induced-Junction; Surface Pas-Sivation; PECVD Silicon Nitride; Radiometry; Optical Power; Primary Standard; Predictable Quantum Efficiency (1)
| Document type | Datasets |
| Journal title / Source | Sensors |
| Volume | 21 |
| Page numbers / Article number | 7807 |
| Publisher's name | MDPI |
| ISSN | ISSN 1424-8220 |
| DOI | 10.5281/Zenodo.5720711 |
| Web URL | https://zenodo.org/record/5720711 |