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Dissipative quantum Hall effect in polycrystalline CVD graphene

Lafont, F. (LNE, Trappes, France), Ribeiro-Palau, R. (LNE, Trappes, France), Cresti, A. (IMEP-LAHC, INP Minatec, Grenoble, France), Han, Z. (CNRS Institut N´eel, Grenoble, France), Cummings, A.W. (ICN2, Barcelona, Espana), Roche, S. (ICREA, Barcelona, Espa˜na), Bouchiat, V. (CNRS Institut N´eel, Grenoble, France), Ducourtieux, S. (LNE, Trappes, France), Schopfer, F. (LNE, Trappes, France) and Poirier, W. (LNE, Trappes, France)

Backscatter,C,CVD graphene,Conductivity,Grain boundaries,Graphene,Hall bar,Hall effect,Landau level filling factor,Quantization (signal),Quantum Hall effect,Resistance,SiO2-Si,backscatter,carriers backscattering,chemical vapor deposition,chemical vapour deposition,counter propagating edge state,dissipative quantum Hall effect,electric resistance measurement,electrical conductivity measurement,grain boundaries,graphene,line defect,longitudinal conductivity measurement,numerical simulation,polycrystalline CVD graphene,quantum Hall effect,resistance metrology,resistance standards,short-circuit current,short-circuit currents,structural characterizations,wrinkles

Document typeProceeding
Journal title / Source29th Conference on Precision Electromagnetic Measurements (CPEM 2014)
Page numbers / Article number42-43
Publisher's nameIEEE
Publication date 2014
Web URLhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6898249

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