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Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

Huang, J. (Department of Physics, University of Oxford, Oxford, United Kingdom), Alexander-Webber, J.A. (Department of Physics, University of Oxford, Oxford, United Kingdom), Janssen, T.J.B.M. (National Physical Laboratory, Teddington, United Kingdom), Tzalenchuk, A. (National Physical Laboratory, Teddington, United Kingdom/ Department of Physics, University of London, Egham, United Kingdom), Yager, T. (Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteburg, Sweden), Lara Avila, S. (Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteburg, Sweden), Kubatkin, S. (Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteburg, Sweden), Myers-Ward, R. L. (U.S. Naval Research Laboratory, Washington D.C., USA), Gaskill, D. K. (U.S. Naval Research Laboratory, Washington D.C., USA) and Nicholas, R.J. (Department of Physics, University of Oxford, Oxford, United Kingdom)
Keywords:

hot carriers, bilayer graphene, energy loss rate, magnetotransport

Document typeArticle
Journal title / SourceHot carrier relaxation of Dirac fermions in bilayer epitaxial graphene
Publisher's namearXiv.org
Publication date 2014-09
DOI10.1088/0953-8984/27/16/164202
Web URLhttp://arxiv.org/abs/1409.6267v1
LanguageEnglish

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