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Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Kruskopf, M. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Pierz, K. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Wundrack, S. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Stosch, R. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Dziomba, T. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Kalmbach, C.C. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Müller, A. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Ahlers, F.J. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Schumacher, H.W. (Physikalisch-Technische Bundesanstalt, Braunschweig, Germany), Baringhaus, J. (Institut für Festkörperphysik, Leibniz Universität Hannover, Hannover, Germany) and Tegenkamp, C. (Institut für Festkörperphysik, Leibniz Universität Hannover, Hannover, Germany)
Keywords:

Epitaxial graphene, step bunching, graphene buffer layer, graphene bilayer, resistance anisotropy, quantum Hall resistance, hydrogen, argon, pretreatment, transport properties, SiC substrate, annealing, shallowly stepped

Document typeArticle
Journal title / SourceEpitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment
Peer-reviewed articleYes
Volume27
Issue18
Page numbers / Article number185303
Publisher's nameIOP Publishing Ltd
Publication date 2015-04-20
ISSN0953-8984
DOI10.1088/0953-8984/27/18/185303
Web URLhttp://iopscience.iop.org/article/10.1088/0953-8984/27/18/185303/meta
LanguageEnglish

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