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Ion beam analysis of Cu(In,Ga)Se2 thin film solar cells

Karydas, AGK ( International Atomic Energy Agency (IAEA), IAEA Laboratories, Nuclear Science and Instrumentation Laboratory, A-2444 Seibersdorf, Austria, Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153 10 Aghia Paraskevi, Athens Greece), Streeck, CS (Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany), Bogdanovic Radovic, IBR (Ruđer Bošković Institute (RBI), Zagreb, Croatia), Kaufmann, CK (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin, Germany), Rissom, TR (Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Hahn-Meitner-Platz 1, 14109 Berlin, Germany), Beckhoff, BB (Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany), Jakšic, MJ (Ruđer Bošković Institute (RBI), Zagreb, Croatia) and Barradas, NPB (Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém, Portugal)
Keywords:

Thin solar Cu(In,Ga)Se2 cells, Ion beam analysis, RBS/PIXE techniques, Synchrotron GIXRF analysis, Depth profiling

Document typeArticle
Journal title / SourceApplied Surface Science
Peer-reviewed articleYes
Volume356
Page numbers / Article number631–638
Publisher's nameElsevier
Publication date 2015-11-30
ISSN0169-4332
DOI10.1016/j.apsusc.2015.08.133
Web URLhttp://ac.els-cdn.com/S0169433215019467/1-s2.0-S0169433215019467-main.pdf?_tid=cba9d288-1c21-11e6-9bf0-00000aab0f26&acdnat=1463484395_b9279df87868924a41b103cfe0aeacf7
LanguageEnglish

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