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Fundamental aspects of Arn+ SIMS profiling of common organic semiconductors

Fleischmann, C. (IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium), Conard, T. (IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium), Havelund, R. (NPL, National Physical Laboratory, Teddington, Middlesex, TW11 0LW, United Kingdom), Franquet, A. (IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium), Poleunis, C. (Université catholique de Louvain, BSMA, Croix du Sud 1, L7.04.01,B-1348 Louvain-la-Neuve, Belgium), Voroshazi, E. (IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium), Delcorte, A. (Université catholique de Louvain, BSMA, Croix du Sud 1, L7.04.01,B-1348 Louvain-la-Neuve, Belgium) and Vandervorst, W. (IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium and Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium)
Keywords:

depth profiling, sputter yield, ion yield, matrix effect, OPV, P3HT, PCDTBT, PCBM

Document typeArticle
Journal title / SourceSurface and Interface Analysis
Peer-reviewed articleYes
Volume1
Issue46
Page numbers / Article number54-57
Publisher's nameWiley Online Library
Publisher's address (city only)New Jersey NYC
Publication date 2016
ISSN0142-2421
DOI10.1002/sia.5621
Web URLhttp://onlinelibrary.wiley.com/doi/10.1002/sia.5621/abstract
LanguageEnglish

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